Datasheet IGB110S101 (Infineon) - 9
制造商 | Infineon |
描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
页数 / 页 | 18 / 9 — Public. IGB110S101. [A]. DS [V]. GS [V]. SD [V] |
修订版 | 01_00 |
文件格式/大小 | PDF / 1.2 Mb |
文件语言 | 英语 |
Public. IGB110S101. [A]. DS [V]. GS [V]. SD [V]
![Public IGB110S101 [A] DS [V] GS [V] SD [V]](https://www.rlocman.ru/datasheet/img.php?di=184311&p=8)
该数据表的模型线
文件文字版本
Public
CoolGaNT MTransistor 100 V G3
IGB110S101
Diagram 5: Typ. output characteristics Diagram 6: Typ. transfer characteristics 250 250 200 5V 200 150 4.5 V 150
[A] [A] I D
4 V
I D
25 °C 100 100 3.6 V 50 50 150 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 5
V DS [V] V GS [V]
I =f( D VDS); Tj=25 °C; parameter: VGS I =f( D VGS); |VDS|>2|I |DRDS(on)max; parameter: Tj Diagram 7: Typ. channel reverse characteristics Diagram 8: Typ. channel reverse characteristics 80 80 70 5 V 2 V 1 V 0 V 1 V 70 5 V 2 V 1 V 0 V 60 60 50 50
[A]
40
[A]
40
I S I S
1 V 30 30 20 20 2 V 10 10 2 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5
V SD [V] V SD [V]
IS=f(VSD); Tj=25 °C; parameter: VGS IS=f(VSD); Tj=125 °C; parameter: VGS Datasheet Revision 1.1 https://www.infineon.com 9 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer