Datasheet IGB110S101 (Infineon) - 3
| 制造商 | Infineon |
| 描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| 页数 / 页 | 18 / 3 — Public. IGB110S101. 1 Maximum ratings. Table 2 Maximum ratings |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Public. IGB110S101. 1 Maximum ratings. Table 2 Maximum ratings
该数据表的模型线
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Public
CoolGaNT MTransistor 100 V G3
IGB110S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 23 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 9.0 VGS=5 V, TA=25 °C, RthJA=50 °C/W 2) 210 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 97 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 15 TC=25 °C Power dissipation Ptot ‑ ‑ W 2.5 TA=25 °C, RthJA=50 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.1 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 23 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 9.0 VGS=5 V, TA=25 °C, RthJA=50 °C/W 2) 210 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 97 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 15 TC=25 °C Power dissipation Ptot ‑ ‑ W 2.5 TA=25 °C, RthJA=50 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.1 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer