Datasheet IGB110S101 (Infineon) - 4
| 制造商 | Infineon |
| 描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| 页数 / 页 | 18 / 4 — Public. IGB110S101. 2 Recommended operating conditions. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Public. IGB110S101. 2 Recommended operating conditions. Table 3 Recommended operating conditions
该数据表的模型线
文件文字版本
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 2 Recommended operating conditions Table 3 Recommended operating conditions
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate‑source voltage VGS ‑4.0 5.0 5.5 V ‑ Datasheet Revision 1.1 https://www.infineon.com 4 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
CoolGaNT MTransistor 100 V G3
IGB110S101 2 Recommended operating conditions Table 3 Recommended operating conditions
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate‑source voltage VGS ‑4.0 5.0 5.5 V ‑ Datasheet Revision 1.1 https://www.infineon.com 4 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer