Datasheet IGB110S101 (Infineon) - 5
| 制造商 | Infineon |
| 描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| 页数 / 页 | 18 / 5 — Public. IGB110S101. 3 Thermal characteristics. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Public. IGB110S101. 3 Thermal characteristics. Table 4 Thermal characteristics
该数据表的模型线
文件文字版本
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 3 Thermal characteristics Table 4 Thermal characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case, top 22 26 RthJC ‑ °C/W ‑ Thermal resistance, junction ‑ case, bottom 5.6 8.1 Thermal resistance, junction ‑ ambient 1s0p RthJA ‑ 70 ‑ °C/W On 1 layer PCB, vertical in still air. Thermal resistance, junction ‑ ambient 2s2p RthJA ‑ 50 ‑ °C/W With vias on 4 layer PCB, vertical in still air. Datasheet Revision 1.1 https://www.infineon.com 5 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
CoolGaNT MTransistor 100 V G3
IGB110S101 3 Thermal characteristics Table 4 Thermal characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case, top 22 26 RthJC ‑ °C/W ‑ Thermal resistance, junction ‑ case, bottom 5.6 8.1 Thermal resistance, junction ‑ ambient 1s0p RthJA ‑ 70 ‑ °C/W On 1 layer PCB, vertical in still air. Thermal resistance, junction ‑ ambient 2s2p RthJA ‑ 50 ‑ °C/W With vias on 4 layer PCB, vertical in still air. Datasheet Revision 1.1 https://www.infineon.com 5 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer