Datasheet IGB110S101 (Infineon) - 6
| 制造商 | Infineon |
| 描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| 页数 / 页 | 18 / 6 — Public. IGB110S101. 4 Electrical Characteristics. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Public. IGB110S101. 4 Electrical Characteristics. Table 5 Static characteristics
该数据表的模型线
文件文字版本
link to page 6 link to page 6 link to page 6 link to page 6 link to page 6
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 4 Electrical Characteristics
at Tj=25 °C, unless otherwise specified
Table 5 Static characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate threshold voltage VGS(th) 1.2 2.0 2.9 V VDS=VGS, I =3.0 mA D 0.1 0.5 VDS=100 V, VGS=0 V, Tj=25 °C Drain‑source leakage current IDSS ‑ μA 2.0 20 VDS=100 V, VGS=0 V, Tj=125 °C 5.0 80 VGS=5 V, Tj=25 °C 0.003 0.1 VGS=‑4 V, Tj=25 °C Gate‑source leakage current IGSS ‑ μA 40 370 VGS=5 V, Tj=125 °C 0.003 0.1 VGS=‑4 V, Tj=125 °C Drain‑source on‑state resistance RDS(on) ‑ 9.4 11 mΩ VGS=5 V, I =10 A D Gate resistance 4) RG ‑ 0.5 ‑ Ω ‑ 4) Defined by design. Not subject to production test.
Table 6 Capacitance characteristics
5) Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Input capacitance Ciss 300 340 Output capacitance Coss ‑ 140 150 pF VGS=0 V, VDS=50 V, f=1 MHz Reverse transfer capacitance Crss 2.3 3.0 5) Defined by design. Not subject to production test.
Table 7 Gate charge characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate to source charge Qgs 1.0 ‑ nC Gate charge at threshold Qg(th) 0.7 ‑ nC Gate to drain charge 6) Qgd 0.9 ‑ nC ‑ VDS=50 V, I =10 A, D VGS=0 to 5 V Switching charge Qsw 1.2 ‑ nC Gate charge total 6) Qg 3.4 4.4 nC Gate plateau voltage Vplateau 2.8 ‑ V Output charge 6) Qoss ‑ 14 15 nC VDS=50 V, VGS=0 V 6) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 6 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 4 Electrical Characteristics
at Tj=25 °C, unless otherwise specified
Table 5 Static characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate threshold voltage VGS(th) 1.2 2.0 2.9 V VDS=VGS, I =3.0 mA D 0.1 0.5 VDS=100 V, VGS=0 V, Tj=25 °C Drain‑source leakage current IDSS ‑ μA 2.0 20 VDS=100 V, VGS=0 V, Tj=125 °C 5.0 80 VGS=5 V, Tj=25 °C 0.003 0.1 VGS=‑4 V, Tj=25 °C Gate‑source leakage current IGSS ‑ μA 40 370 VGS=5 V, Tj=125 °C 0.003 0.1 VGS=‑4 V, Tj=125 °C Drain‑source on‑state resistance RDS(on) ‑ 9.4 11 mΩ VGS=5 V, I =10 A D Gate resistance 4) RG ‑ 0.5 ‑ Ω ‑ 4) Defined by design. Not subject to production test.
Table 6 Capacitance characteristics
5) Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Input capacitance Ciss 300 340 Output capacitance Coss ‑ 140 150 pF VGS=0 V, VDS=50 V, f=1 MHz Reverse transfer capacitance Crss 2.3 3.0 5) Defined by design. Not subject to production test.
Table 7 Gate charge characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate to source charge Qgs 1.0 ‑ nC Gate charge at threshold Qg(th) 0.7 ‑ nC Gate to drain charge 6) Qgd 0.9 ‑ nC ‑ VDS=50 V, I =10 A, D VGS=0 to 5 V Switching charge Qsw 1.2 ‑ nC Gate charge total 6) Qg 3.4 4.4 nC Gate plateau voltage Vplateau 2.8 ‑ V Output charge 6) Qoss ‑ 14 15 nC VDS=50 V, VGS=0 V 6) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 6 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer