Datasheet IGB110S101 (Infineon) - 7
| 制造商 | Infineon |
| 描述 | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| 页数 / 页 | 18 / 7 — Public. IGB110S101. Table 8 Reverse operation |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Public. IGB110S101. Table 8 Reverse operation
该数据表的模型线
文件文字版本
link to page 7
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 Table 8 Reverse operation
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Reverse continuous current IS 5.0 ‑ ‑ A TC=25 °C Pulsed current, reverse IS,pulse 92 2.6 3.4 VGS=0 V, IS,pulse=10 A, Tj=25 °C Source‑Drain reverse voltage VSD ‑ V 2.2 ‑ VGS=0 V, IS,pulse=0.5 A, Tj=25 °C R IS,pulse iS,pulse t Reverse recovery charge 7) Qrr ‑ 0 ‑ nC V =50 V, =10 A, d /d =100 A/μs 7) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 7 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 Table 8 Reverse operation
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Reverse continuous current IS 5.0 ‑ ‑ A TC=25 °C Pulsed current, reverse IS,pulse 92 2.6 3.4 VGS=0 V, IS,pulse=10 A, Tj=25 °C Source‑Drain reverse voltage VSD ‑ V 2.2 ‑ VGS=0 V, IS,pulse=0.5 A, Tj=25 °C R IS,pulse iS,pulse t Reverse recovery charge 7) Qrr ‑ 0 ‑ nC V =50 V, =10 A, d /d =100 A/μs 7) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 7 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer