Datasheet KSD1691 (Fairchild) - 2

KSD169 Typical Characteristics 1 10 1000
A A 0m 0m
8
20 15 NT VCE = 2V = = I B IB RE I = 100mA B IB = 80mA I IN B = 60mA A
100
VCE = 1V CUR G
6
R I = 40mA NT B O T I = 30mA B C E I URRE
4
B = 20mA LL
10
CO ], DC C IB = 10mA
2
h FE Ic[A IB = 0
0 1 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10
V IC[A], COLLECTOR CURRENT CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
E
10 10
AG Ic = 10 IB T Ic(Pulse)MAX L 2mS 10m VO Ic(DC)MAX N D 200m S iss IO ipa T S
1
V t BE(sat) A ion L R U im CURRENT T it R ed
1
O SA ECT s/ t)[V], b Li L a
0.1
m (s ited CE COL ) at) [A], X t), V (s A a I C VCE (s (M O BE CE V V
0.01 0.1 0.1 1 10 1 10 100
I V C[A], COLLECTOR CURRENT CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area Base-Emitter Saturation Voltage 10 160 140 8
NT
120 100
ING
6
T CURRE R RA O
80
s/b LI CT DE MI c T
4
ED
60
DI LLE ], I SSI ) P [% AT US d T
40
IO ], CO N LI
2
(S O [A MI CE I C T V
20
ED
0 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200
V o CE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International Rev. A, February 2000