Datasheet IRF530 (On Semiconductor) - 6
| 制造商 | On Semiconductor |
| 描述 | TMOS E−FET Power Field Effect. Transistor N−Channel Enhancement−Mode Silicon Gate |
| 页数 / 页 | 7 / 6 — IRF530. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. … |
| 文件格式/大小 | PDF / 192 Kb |
| 文件语言 | 英语 |
IRF530. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus
文件文字版本
IRF530 SAFE OPERATING AREA
100 110 V I GS = 20 V D = 14 A 100 SINGLE PULSE T 10μs 90 C = 25°C O−SOURCE (mJ) 80 (AMPS) 10 100μs 70 60 1ms 50 10ms 40 1.0 dc , DRAIN CURRENT 30 AVALANCHE ENERGY I D RDS(on) LIMIT 20 , SINGLE PULSE DRAIN−T THERMAL LIMIT 10 PACKAGE LIMIT E AS 0.1 0 0.1 1.0 10 100 1000 25 50 75 100 125 15 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.0 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE 0.01 t1 READ TIME AT t1 r(t) t2 TJ(pk) − TC = P(pk) RθJC(t) SINGLE PULSE TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6
100 110 V I GS = 20 V D = 14 A 100 SINGLE PULSE T 10μs 90 C = 25°C O−SOURCE (mJ) 80 (AMPS) 10 100μs 70 60 1ms 50 10ms 40 1.0 dc , DRAIN CURRENT 30 AVALANCHE ENERGY I D RDS(on) LIMIT 20 , SINGLE PULSE DRAIN−T THERMAL LIMIT 10 PACKAGE LIMIT E AS 0.1 0 0.1 1.0 10 100 1000 25 50 75 100 125 15 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.0 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE 0.01 t1 READ TIME AT t1 r(t) t2 TJ(pk) − TC = P(pk) RθJC(t) SINGLE PULSE TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6