Datasheet BAV99 (NXP) - 3
| 制造商 | NXP |
| 描述 | High-speed switching diodes |
| 页数 / 页 | 14 / 3 — NXP Semiconductors. BAV99 series. High-speed switching diodes. 5. … |
| 文件格式/大小 | PDF / 341 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BAV99 series. High-speed switching diodes. 5. Limiting. values. Table 6. Limiting values. Symbol. Parameter
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NXP Semiconductors BAV99 series High-speed switching diodes 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per diode
VRRM repetitive peak reverse - 100 V voltage VR reverse voltage - 100 V IF forward current BAV99 [1] - 215 mA [2] - 125 mA BAV99S [1] - 200 mA BAV99W [1] - 150 mA [2] - 130 mA IFRM repetitive peak forward - 500 mA current IFSM non-repetitive peak square wave [3] forward current tp = 1 μs - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation [1][4] BAV99 T ≤ amb 25 °C - 250 mW BAV99S T ≤ sp 85 °C [5] - 250 mW BAV99W T ≤ amb 25 °C - 200 mW
Per device
Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [5] Soldering points at pins 2, 3, 5 and 6. BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NXP Semiconductors BAV99 series High-speed switching diodes 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per diode
VRRM repetitive peak reverse - 100 V voltage VR reverse voltage - 100 V IF forward current BAV99 [1] - 215 mA [2] - 125 mA BAV99S [1] - 200 mA BAV99W [1] - 150 mA [2] - 130 mA IFRM repetitive peak forward - 500 mA current IFSM non-repetitive peak square wave [3] forward current tp = 1 μs - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation [1][4] BAV99 T ≤ amb 25 °C - 250 mW BAV99S T ≤ sp 85 °C [5] - 250 mW BAV99W T ≤ amb 25 °C - 200 mW
Per device
Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [5] Soldering points at pins 2, 3, 5 and 6. BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents