Datasheet BAV99 (NXP) - 6
| 制造商 | NXP |
| 描述 | High-speed switching diodes |
| 页数 / 页 | 14 / 6 — NXP Semiconductors. BAV99 series. High-speed switching diodes. 8. Test. … |
| 文件格式/大小 | PDF / 341 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BAV99 series. High-speed switching diodes. 8. Test. information. Fig 5
该数据表的模型线
文件文字版本
NXP Semiconductors BAV99 series High-speed switching diodes 8. Test information
tr tp t D.U.T. 10 % + IF t R rr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I 1 kΩ 450 Ω I V 90 % RS = 50 Ω OSCILLOSCOPE V D.U.T. FR Ri = 50 Ω 10 % t t tr tp input signal output signal mga882 Input signal: forward pulse rise time t ≥ r = 20 ns; forward current pulse duration tp 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
tr tp t D.U.T. 10 % + IF t R rr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I 1 kΩ 450 Ω I V 90 % RS = 50 Ω OSCILLOSCOPE V D.U.T. FR Ri = 50 Ω 10 % t t tr tp input signal output signal mga882 Input signal: forward pulse rise time t ≥ r = 20 ns; forward current pulse duration tp 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents