Datasheet BF998, BF998R - 8

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R handbook, full pagewidth VDD 47 μF V 1 nF agc 1 nF 20 μH 1 nF 1 nF 1.8 kΩ 50 Ω 47 kΩ L2 output 1 nF C1 5.5 pF 50 Ω 1 nF input 15 pF 360 Ω 10 pF L1 140 kΩ V 1 nF D1 D2 DD 330 k BB405 Ω 330 k BB405 Ω 100 kΩ 1 nF 1 nF V V tun tun input output MGE802 VDD = 12 V; GS = 2 mS; GL = 0.5 mS. L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm. L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS. Fig.17 Gain control test circuit at f = 200 MHz. 1996 Aug 01 8 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers