Datasheet 2N3906, MMBT3906, PZT3906 (Fairchild) - 4

V CESAT -COLLECTOR EMITTER VOLTAGE (V) h F E -TYPICAL PULSED CURRENT GAIN 250 V CE = 1 .0V 150 100 -40 °C 50
0.1 0.2 0.5 1
2
5
10 20
I C -COLLECTOR CURRE NT (mA) 50 100 125°C β = 10
-40 °C -40 °C 1 10
100
I C -COLLECTOR CURRENT (mA) 25 °C 1 -40 °C 0.6 125 °C 25 °C
125 °C 0.4 0.4 V CE = 1V 0.2 0.2 1 10
100
I C -COLLECTOR CURRE NT (mA) 200 CB CAPACITANCE (pF) 1 0.1 50
75
100
TA -AMBIE NT TEMP ERATURE (° C) 8 25 C obo 6
4 C ibo 2
0
0.1 125 1
REVERSE BIAS VOLTAGE (V) 10 Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage Figure 5. Collector Cut-Off Current vs.
Ambient Temperature © 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 1
10
I C -COLLECTOR CURRENT (mA) 10 = 25V 10 0.01
25 0
0.1 Figure 4. Base-Emitter On Voltage vs.
Collector Current 100
V 200 0.8 0.8
0.6 0 VBE( ON)-BASE EMITTER ON VOLTAGE (V) V BESAT -BASE EM ITTE R VOLTAGE (V) 0.1 Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
I CBO -COLLE CTOR CURRENT (nA) 25 °C 0.05 Figure 1. Typical Pulsed Current Gain vs. Collector
Current 0 0.2 0.15 25 °C 1 β = 10 0.25 125 °C 200 0.3 www.fairchildsemi.com
4 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Typical Performance Characteristics