Datasheet 2N3906, MMBT3906, PZT3906 (Fairchild) - 3

Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown
Voltage(4) V(BR)CBO
V(BR)EBO
IBL
ICEX IC = -1.0 mA, IB = 0 -40 V Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA ON CHARACTERISTICS hFE DC Current Gain(4) VCE(sat) Collector-Emitter Saturation
Voltage VBE(sat) Base-Emitter Saturation Voltage IC = -0.1 mA, VCE = -1.0 V 60 IC = -1.0 mA, VCE = -1.0 V 80 IC = -10 mA, VCE = -1.0 V 100 IC = -50 mA, VCE = -1.0 V 60 IC = -100 mA, VCE = -1.0V 30 300 IC = -10 mA, IB = -1.0 mA -0.25 IC = -50 mA, IB = -5.0 mA -0.40 IC = -10 mA, IB = -1.0 mA -0.65 IC = -50 mA, IB = -5.0 mA -0.85
-0.95 V
V SMALL SIGNAL CHARACTERISTICS
Current Gain -Bandwidth Product IC = -10 mA, VCE = -20 V,
f = 100 MHz Cobo Output Capacitance VCB = -5.0 V, IE = 0,
f = 100 kHz 4.5 pF Cibo Input Capacitance VEB = -0.5 V, IC = 0,
f = 100 kHz 10.0 pF NF Noise Figure IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz 4.0 dB 35 ns 35 ns 225 ns 75 ns fT 250 MHz SWITCHING CHARACTERISTICS
td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com
3 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Electrical Characteristics