Datasheet 2N3906, MMBT3906, PZT3906 (Fairchild) - 2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -200 mA -55 to +150 °C IC
TJ, TSTG Parameter Collector Current -Continuous
Operating and Storage Junction Temperature Range Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations. Thermal Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
PD Maximum Parameter
Total Device Dissipation Unit 2N3906(3) MMBT3906(2) PZT3906(3) 625 350 1,000 mW 2.8 8.0 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W
357 125 °C/W Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2 www.fairchildsemi.com
2 2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier Absolute Maximum Ratings(1)