Datasheet BSC093N04LS G
| 描述 | OptiMOS 3 Power-Transistor |
| 页数 / 页 | 10 / 1 — BSC093N04LS G. OptiMOS™3 Power-Transistor. Product Summary. Features. … |
| 文件格式/大小 | PDF / 533 Kb |
| 文件语言 | 英语 |
BSC093N04LS G. OptiMOS™3 Power-Transistor. Product Summary. Features. Type. Package. Marking. Maximum ratings,. Parameter
文件文字版本
BSC093N04LS G OptiMOS™3 Power-Transistor Product Summary Features
V 40 V DS • Fast switching MOSFET for SMPS R 9.3 DS(on),max mW • Optimized technology for DC/DC converters I 49 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Type Package Marking
BSC093N04LS G PG-TDSON-8 093N04LS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 49 A V GS=10 V, T C=100 °C 31 V GS=4.5 V, T C=25 °C 40 V GS=4.5 V, 26 T C=100 °C V GS=10 V, T A=25 °C, 13 R thJA=50 K/W2) Pulsed drain current3) I D,pulse T C=25 °C 196 Avalanche current, single pulse4) I AS T C=25 °C 40 Avalanche energy, single pulse E AS I D=40 A, R GS=25 W 10 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-21
V 40 V DS • Fast switching MOSFET for SMPS R 9.3 DS(on),max mW • Optimized technology for DC/DC converters I 49 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21
Type Package Marking
BSC093N04LS G PG-TDSON-8 093N04LS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 49 A V GS=10 V, T C=100 °C 31 V GS=4.5 V, T C=25 °C 40 V GS=4.5 V, 26 T C=100 °C V GS=10 V, T A=25 °C, 13 R thJA=50 K/W2) Pulsed drain current3) I D,pulse T C=25 °C 196 Avalanche current, single pulse4) I AS T C=25 °C 40 Avalanche energy, single pulse E AS I D=40 A, R GS=25 W 10 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-21