Datasheet Si7611DN (Vishay) - 2

New Product Si7611DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 26 34 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.4 3.2 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W.
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient ΔVDS/TJ - 41 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 40 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) V ≤ DS - 5 V, VGS = - 10 V - 10 A VGS = - 10 V, ID = - 9.3 A 0.021 0.025 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 8.1 A 0.027 0.033 Forward Transconductancea gfs VDS = - 15 V, ID = - 9.3 A 25 S
Dynamicb
Input Capacitance Ciss 1980 Output Capacitance C V oss DS = - 20 V, VGS = 0 V, f = 1 MHz 215 pF Reverse Transfer Capacitance Crss 175 VDS = - 20 V, VGS = - 10 V, ID = - 9.3 A 41 62 Total Gate Charge Qg 21 32 nC Gate-Source Charge Q V gs DS = - 20 V, VGS = - 4.5 V, ID = - 9.3 A 7 Gate-Drain Charge Qgd 10 Gate Resistance Rg f = 1 MHz 1.9 2.9 Ω Turn-On Delay Time td(on) 47 71 Rise Time t V r DD = - 20 V, RL = 5 Ω 150 225 Turn-Off DelayTime t I d(off) D ≅ - 7.4 A, VGEN = - 4.5 V, Rg = 1 Ω 28 41 Fall Time tf 12 18 ns Turn-On Delay Time td(on) 10 15 Rise Time t V r DD = - 20 V, RL = 5 Ω 11 17 Turn-Off DelayTime t I d(off) D ≅ - 7.4 A, VGEN = - 10 V, Rg = 1 Ω 30 45 Fall Time tf 9 14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 18e A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IF = - 7.4 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 21 32 ns Body Diode Reverse Recovery Charge Qrr 17 26 nC IF = - 7.4 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69939 2 S-80895-Rev. B, 21-Apr-08