Datasheet Si7611DN (Vishay) - 3
| 制造商 | Vishay |
| 描述 | P-Channel 40-V (D-S) MOSFET |
| 页数 / 页 | 13 / 3 — New Product. Si7611DN. TYPICAL CHARACTERISTICS. Output Characteristics. … |
| 文件格式/大小 | PDF / 579 Kb |
| 文件语言 | 英语 |
New Product. Si7611DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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New Product Si7611DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 4 VGS = 10 thru 4.5 V VGS = 4 V 30 3 (A) (A) rrent rrent u u C 20 C 2 TC = 25 °C - Drain - Drain I D I D 10 1 V T GS = 3 V C = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.030 3000 ) 2400 Ciss 0.027 (Ω VGS = 4.5 V (pF) 1800 esistance 0.024 -R - On 1200 on) C - Capacitance DS( 0.021 R V C GS = 10 V 600 oss Crss 0.018 0 0 5 10 15 20 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 1.7 ID = 9.3 A ) (V 8 VGS = 10 V, ID = 9.3 A V 1.4 DS = 20 V oltage V 6 rce V esistance u DS = 32 V -R 1.1 V -So ormalized) GS = 4.5 V, ID = 8.1 A - On -to 4 (N n) DS(o - Gate R 0.8 GS 2 V 0 0.5 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 Q TJ - Junction Temperature (°C) g - Total Gate Charge (nC)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 4 VGS = 10 thru 4.5 V VGS = 4 V 30 3 (A) (A) rrent rrent u u C 20 C 2 TC = 25 °C - Drain - Drain I D I D 10 1 V T GS = 3 V C = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.030 3000 ) 2400 Ciss 0.027 (Ω VGS = 4.5 V (pF) 1800 esistance 0.024 -R - On 1200 on) C - Capacitance DS( 0.021 R V C GS = 10 V 600 oss Crss 0.018 0 0 5 10 15 20 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 1.7 ID = 9.3 A ) (V 8 VGS = 10 V, ID = 9.3 A V 1.4 DS = 20 V oltage V 6 rce V esistance u DS = 32 V -R 1.1 V -So ormalized) GS = 4.5 V, ID = 8.1 A - On -to 4 (N n) DS(o - Gate R 0.8 GS 2 V 0 0.5 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 Q TJ - Junction Temperature (°C) g - Total Gate Charge (nC)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 3