Datasheets - MOSFET阵列和模块 - 9
小节: "MOSFET阵列和模块"
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Part Number: SI4913DY-T1-GE3 Manufacturer: Vishay Description: DUAL P CHANNEL MOSFET, -20 V, 9.4 A Download Data Sheet Docket: Si4913DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.015 at VGS = - 4.5 V ...- Part Number: SI4913DY-T1-E3 Manufacturer: Vishay Description: DUAL P CHANNEL MOSFET, -20 V, SOIC Specifications: Continuous Drain Current Id: 9.4 A Drain Source Voltage Vds: -20 V On Resistance Rds(on): 24 MOhm Rds(on) Test Voltage Vgs: 8 V ...
- Part Number: SI4906DY-T1-E3 Manufacturer: Vishay Description: DUAL N CHANNEL MOSFET, 40 V, SOIC Download Data Sheet Docket: Si4906DY Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES ID (A)a 6.6 5.8 Qg (Typ.) 6.6 Simulation Model ...
- Part Number: SI4816DY-T1-E3 Manufacturer: Vishay Description: DUAL N CH/SCHOTTKY MOSFET, 30 V SOIC Download Data Sheet Docket: Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 ...
Part Number: SI4563DY-T1-GE3 Manufacturer: Vishay Description: NPN & PNP MOSFET, SOIC Specifications: Continuous Drain Current Id: 8 A Drain Source Voltage Vds: 40 V On Resistance Rds(on): 16 MOhm Power Dissipation Pd: 2 W Threshold Voltage Vgs ...- Part Number: SI4563DY-T1-E3 Manufacturer: Vishay Description: DUAL N/P CHANNEL MOSFET, 40 V, SOIC Specifications: Continuous Drain Current Id: 8 A Drain Source Voltage Vds: 40 V On Resistance Rds(on): 16 MOhm Rds(on) Test Voltage Vgs: 16 V ...
- Part Number: SI4562DY-T1-E3 Manufacturer: Vishay Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC Simulation Model Specifications: Continuous Drain Current Id: 7.1 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 19 MOhm Rds(on) Test Voltage ...
- Part Number: SI4561DY-T1-GE3 Manufacturer: Vishay Description: NPN/PNP MOSFET, 40 V, SOIC Download Data Sheet Docket: Si4561DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 RDS(on) () 0.0355 ...
- Part Number: SI4532ADY-T1-GE3 Manufacturer: Vishay Description: DUAL N/P CH MOSFET Specifications: Continuous Drain Current Id: 3.7 A Drain Source Voltage Vds: 30 V Module Configuration: Dual On Resistance Rds(on): 44 MOhm Rds(on) Test Voltage Vgs: ...
- Part Number: SI4511DY-T1-E3 Manufacturer: Vishay Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC Specifications: Continuous Drain Current Id: 9.6 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 14.5 MOhm Rds(on) Test Voltage Vgs: 10 V ...
- Part Number: SI4501ADY-T1-GE3 Manufacturer: Vishay Description: DUAL N/P CHANNEL MOSFET, 30 V, SOIC Download Data Sheet Docket: Si4501ADY Vishay Siliconix Complementary (N- and P-Channel) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 -8 ...
- Part Number: SI4500BDY-T1-E3 Manufacturer: Vishay Description: NPN/PNP MOSFET, 20 V, SOIC Specifications: Continuous Drain Current Id: 7 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 22 MOhm Rds(on) Test Voltage Vgs: 4.5 V Threshold ...
- Part Number: SI4210DY-T1-GE3 Manufacturer: Vishay Description: DUAL N CHANNEL MOSFET, 30 V, 6.5 A Specifications: Continuous Drain Current Id: 6.5 A Drain Source Voltage Vds: 30 V On Resistance Rds(on): 35.5 MOhm Rds(on) Test Voltage Vgs: 10 V ...
Part Number: SI3993DV-T1-GE3 Manufacturer: Vishay Description: DUAL P CHANNEL MOSFET, -30 V, 2.2 A Specifications: Continuous Drain Current Id: -2.2 A Drain Source Voltage Vds: -30 V On Resistance Rds(on): 133 MOhm Rds(on) Test Voltage Vgs: -10 V ...- Part Number: SI3951DV-T1-GE3 Manufacturer: Vishay Description: DUAL P CHANNEL MOSFET, -20 V, 2.7 A Specifications: Continuous Drain Current Id: -2.7 A Drain Source Voltage Vds: -20 V On Resistance Rds(on): 0.115 Ohm Rds(on) Test Voltage Vgs: -4.5 V ...
- Part Number: SI3900DV-T1-GE3 Manufacturer: Vishay Description: DUAL N CHANNEL MOSFET, 20 V, 2.4 A Specifications: Continuous Drain Current Id: 2.4 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 125 MOhm Rds(on) Test Voltage Vgs: 4.5 V ...
- Part Number: SI3865CDV-T1-GE3 Manufacturer: Vishay Description: DUAL N/P CH MOSFET Specifications: Continuous Drain Current Id: 2.8 A Drain Source Voltage Vds: 12 V On Resistance Rds(on): 60 MOhm Power Dissipation Pd: 830 mW Rds(on) Test Voltage ...
- Part Number: SI3861BDV-T1-GE3 Manufacturer: Vishay Description: DUAL N/P CH MOSFET Specifications: Continuous Drain Current Id: 2.3 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 145 MOhm Power Dissipation Pd: 830 mW Rds(on) Test Voltage ...
- Part Number: SI3861BDV-T1-E3 Manufacturer: Vishay Description: NPN/PNP MOSFET, 20 V, TSOP Specifications: Continuous Drain Current Id: 2.3 A Drain Source Voltage Vds: 20 V On Resistance Rds(on): 145 MOhm Power Dissipation Pd: 830 mW Rds(on) Test ...
- Part Number: SI3850ADV-T1-GE3 Manufacturer: Vishay Description: DUAL N/P CHANNEL MOSFET, 20 V, TSOP Download Data Sheet Docket: Si3850ADV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 ...