Datasheet DN2470 (Microchip)
| 制造商 | Microchip |
| 描述 | N-Channel, Depletion-Mode, Vertical DMOS FET |
| 页数 / 页 | 11 / 1 — DN2470. N-Channel, Depletion-Mode, Vertical DMOS FET. Features. … |
| 文件格式/大小 | PDF / 493 Kb |
| 文件语言 | 英语 |
DN2470. N-Channel, Depletion-Mode, Vertical DMOS FET. Features. Description. Applications
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文件文字版本
DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description
• High-input impedance This low threshold, depletion-mode, normally-on, tran- • Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal • Fast switching speeds Oxide Semiconductor (DMOS) structure and a well • Low on-resistance proven silicon-gate manufacturing process. This com- • Free from secondary breakdown bination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input • Low input and output leakage impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices.
Applications
Characteristic of all MOS structures, this device is free • Normally-on switches from thermal runaway and thermally-induced second- ary breakdown. • Solid state relays • Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- • Linear amplifiers ally suited to a wide range of switching and amplifying • Constant current sources applications where a very low threshold voltage, high • Battery operated systems breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. • Telecom 2015 Microchip Technology Inc. DS20005410A-page 1 Document Outline 1.0 Electrical Characteristics TABLE 1-1: Thermal characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Application Information FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham
• High-input impedance This low threshold, depletion-mode, normally-on, tran- • Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal • Fast switching speeds Oxide Semiconductor (DMOS) structure and a well • Low on-resistance proven silicon-gate manufacturing process. This com- • Free from secondary breakdown bination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input • Low input and output leakage impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices.
Applications
Characteristic of all MOS structures, this device is free • Normally-on switches from thermal runaway and thermally-induced second- ary breakdown. • Solid state relays • Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- • Linear amplifiers ally suited to a wide range of switching and amplifying • Constant current sources applications where a very low threshold voltage, high • Battery operated systems breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. • Telecom 2015 Microchip Technology Inc. DS20005410A-page 1 Document Outline 1.0 Electrical Characteristics TABLE 1-1: Thermal characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Application Information FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham