Datasheet DN2470 (Microchip) - 3

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DN2470 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage.. BVDSX Drain-to-gate voltage..BVDGX Gate-to-source voltage... ±20V Operating and storage temperature... -55°C to +150°C
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC AND AC CHARACTERISTICS Electrical Specifications:
Unless otherwise specified, for all specifications TA =TJ = +25°C
Parameter Symbol Min Typ Max Units Conditions DC Parameters
(
Note 1 ,
unless otherwise stated) Drain-to-source breakdown voltage BVDSX 700 – – V VGS = -5.0V, ID= 100µA Gate-to-source off voltage VGS(OFF) -1.5 – -3.5 V VDS = 25V, ID= 10µA Change in VGS(OFF) with tempera- ∆V ture GS(OFF) – – -4.5 mV/°C VDS = 25V, ID= 10µA ((
Note 2 )
Gate body leakage current IGSS – – 100 nA VGS = ±20V, VDS= 0V – – 1.0 µA VDS = BVDSX, VGS = -10V Drain-to-source leakage current ID(OFF) V – – 1.0 mA DS = 0.8 BVDSX, VGS = -10V, TA= 125°C ((
Note 2)
Saturated drain-to-source current IDSS – 500 - mA VGS = 0V, VDS= 25V Static drain-to-source on-state R resistance DS(ON) – – 42 Ω VGS = 0V, ID= 100mA Change in RDS(ON) with temperature ∆RDS(ON) – – 1.1 %/°C VGS= 0V, ID= 100mA (
Note 2
)
AC Parameters
(
Note 2
) Forward transconductance GFS 100 – – mmho VDS= 10V, ID= 100mA Input capacitance CISS – – 540 Common source output capaci- V C pF GS= -10V, VDS= 25V, tance OSS – – 60 f = 1.0 MHz Reverse transfer capacitance CRSS – – 25 Turn-on delay time td(ON) – – 30 VDD= 25V, Rise time tr – – 45 ns ID= 100mA, Turn-off delay time td(OFF) – – 45 RGEN= 25Ω, Fall time tf – – 60
Diode Parameters
Diode forward voltage drop VSD – – 1.8 V VGS= -5.0V, ISD= 200mA (
Note 1
) Reverse recovery time trr – 800 – ns VGS= -5.0V, ISD= 200mA (
Note 2
)
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested.  2015 Microchip Technology Inc. DS20005410A-page 3 Document Outline 1.0 Electrical Characteristics TABLE 1-1: Thermal characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Application Information FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham