Datasheet 2N3905/2N3906 (Motorola)
| 制造商 | Motorola |
| 描述 | PNP Silicon General Purpose Transistors |
| 页数 / 页 | 6 / 1 — Order this document. SEMICONDUCTOR TECHNICAL DATA. by 2N3905/D. PNP … |
| 文件格式/大小 | PDF / 146 Kb |
| 文件语言 | 英语 |
Order this document. SEMICONDUCTOR TECHNICAL DATA. by 2N3905/D. PNP Silicon. *Motorola Preferred Device. MAXIMUM RATINGS. Rating
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Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D PNP Silicon *Motorola Preferred Device
COLLECTOR 3 2 BASE 1 EMITTER 1
MAXIMUM RATINGS
2 3
Rating Symbol Value Unit CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 40 Vdc
TO–92 (TO–226AA)
Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg – 55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W Ambient Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage V(BR)CBO 40 — Vdc (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IE = 10 mAdc, IC = 0) Base Cutoff Current IBL — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current ICEX — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996
COLLECTOR 3 2 BASE 1 EMITTER 1
MAXIMUM RATINGS
2 3
Rating Symbol Value Unit CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 40 Vdc
TO–92 (TO–226AA)
Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg – 55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS(1) Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W Ambient Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage V(BR)CBO 40 — Vdc (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IE = 10 mAdc, IC = 0) Base Cutoff Current IBL — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current ICEX — 50 nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 Motorola, Inc. 1996