Datasheet 2N3905/2N3906 (Motorola) - 2
制造商 | Motorola |
描述 | PNP Silicon General Purpose Transistors |
页数 / 页 | 6 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. ON … |
文件格式/大小 | PDF / 146 Kb |
文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. ON CHARACTERISTICS(1). SMALL– SIGNAL CHARACTERISTICS
该数据表的模型线
文件文字版本
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1)
DC Current Gain hFE — (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3905 30 — 2N3906 60 — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 40 — 2N3906 80 — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 50 150 2N3906 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 30 — 2N3906 60 — (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 15 — 2N3906 30 — Collector – Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) — 0.25 (IC = 50 mAdc, IB = 5.0 mAdc — 0.4 Base – Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) — 0.95
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3905 200 — 2N3906 250 — Output Capacitance Cobo — 4.5 pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo — 10.0 pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance hie k Ω (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.5 8.0 2N3906 2.0 12 Voltage Feedback Ratio hre X 10– 4 (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.1 5.0 2N3906 0.1 10 Small–Signal Current Gain hfe — (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 50 200 2N3906 100 400 Output Admittance hoe mmhos (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 1.0 40 2N3906 3.0 60 Noise Figure NF dB (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 — 5.0 2N3906 — 4.0
SWITCHING CHARACTERISTICS
Delay Time (V ( CC = 3.0 Vdc, V CC , BE = 0.5 Vdc, td — 35 ns BE , Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns Storage Time 2N3905 ts — 200 ns 2N3906 — 225 (VCC (V = 3.0 Vdc, I CC = 3.0 Vdc, C I = 10 mAdc, C = 10 mAdc, Fall Time I t 60 ns B1 = IB2 = 1.0 mAd 2N3905 f — 2N3906 — 75 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data