Datasheet 2N3905/2N3906 (Motorola) - 2

制造商Motorola
描述PNP Silicon General Purpose Transistors
页数 / 页6 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. ON …
文件格式/大小PDF / 146 Kb
文件语言英语

ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. ON CHARACTERISTICS(1). SMALL– SIGNAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) SMALL– SIGNAL CHARACTERISTICS

该数据表的模型线

文件文字版本

ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1)
DC Current Gain hFE — (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3905 30 — 2N3906 60 — (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 40 — 2N3906 80 — (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 50 150 2N3906 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 30 — 2N3906 60 — (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 15 — 2N3906 30 — Collector – Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) — 0.25 (IC = 50 mAdc, IB = 5.0 mAdc — 0.4 Base – Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) — 0.95
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3905 200 — 2N3906 250 — Output Capacitance Cobo — 4.5 pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo — 10.0 pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance hie k Ω (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.5 8.0 2N3906 2.0 12 Voltage Feedback Ratio hre X 10– 4 (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.1 5.0 2N3906 0.1 10 Small–Signal Current Gain hfe — (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 50 200 2N3906 100 400 Output Admittance hoe mmhos (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 1.0 40 2N3906 3.0 60 Noise Figure NF dB (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 — 5.0 2N3906 — 4.0
SWITCHING CHARACTERISTICS
Delay Time (V ( CC = 3.0 Vdc, V CC , BE = 0.5 Vdc, td — 35 ns BE , Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns Storage Time 2N3905 ts — 200 ns 2N3906 — 225 (VCC (V = 3.0 Vdc, I CC = 3.0 Vdc, C I = 10 mAdc, C = 10 mAdc, Fall Time I t 60 ns B1 = IB2 = 1.0 mAd 2N3905 f — 2N3906 — 75 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data