Datasheet 2N3905/2N3906 (Motorola) - 5
制造商 | Motorola |
描述 | PNP Silicon General Purpose Transistors |
页数 / 页 | 6 / 5 — TYPICAL STATIC CHARACTERISTICS. Figure 13. DC Current Gain. Figure 14. … |
文件格式/大小 | PDF / 146 Kb |
文件语言 | 英语 |
TYPICAL STATIC CHARACTERISTICS. Figure 13. DC Current Gain. Figure 14. Collector Saturation Region. Figure 15. “ON” Voltages
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TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C (NORMALIZED) 0.7 – 55°C GAIN 0.5 0.3 0.2 FEh , DC CURRENT 0.10.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0 TS) T (VOL J = 25°C 0.8 TAGE IC = 1.0 mA 10 mA 30 mA 100 mA VOL 0.6 EMITTER 0.4 OR 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.0 1.0 T ° J = 25°C VBE(sat) @ IC/IB = 10 0.8 0.5 +25°C TO +125°C q V VC FOR VCE(sat) BE @ VCE = 1.0 V TS) 0 0.6 – 55°C TO +25°C (VOL – 0.5 TAGE 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ C) V – 1.0 VCE(sat) @ IC/IB = 10 – 55°C TO +25°C 0.2 – 1.5 qVB FOR VBE(sat) , TEMPERA Vq 0 – 2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages Figure 16. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data 5