Datasheet MMBT3906L, SMMBT3906L (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | PNP Bipolar Transistor |
| 页数 / 页 | 7 / 2 — MMBT3906L, SMMBT3906L. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 13 |
| 文件格式/大小 | PDF / 89 Kb |
| 文件语言 | 英语 |
MMBT3906L, SMMBT3906L. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
该数据表的模型线
文件文字版本
link to page 2
MMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −1.0 mAdc, IB = 0) −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 mAdc, IC = 0) −5.0 − Base Cutoff Current IBL nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50 Collector Cutoff Current ICEX nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50
ON CHARACTERISTICS
(Note 4) DC Current Gain HFE − (IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) 250 − Output Capacitance Cobo pF (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.5 Input Capacitance Cibo pF (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) − 10 Input Impedance hie kW (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 2.0 12 Voltage Feedback Ratio hre X 10− 4 (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 0.1 10 Small − Signal Current Gain hfe − (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 100 400 Output Admittance hoe mmhos (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 3.0 60 Noise Figure NF dB (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time t (V d − 35 CC = −3.0 Vdc, VBE = 0.5 Vdc, ns I Rise Time C = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (V t CC = −3.0 Vdc, IC = −10 mAdc, s − 225 ns IB1 = IB2 = −1.0 mAdc) Fall Time tf − 75 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com 2
MMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −1.0 mAdc, IB = 0) −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 mAdc, IC = 0) −5.0 − Base Cutoff Current IBL nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50 Collector Cutoff Current ICEX nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50
ON CHARACTERISTICS
(Note 4) DC Current Gain HFE − (IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) 250 − Output Capacitance Cobo pF (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.5 Input Capacitance Cibo pF (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) − 10 Input Impedance hie kW (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 2.0 12 Voltage Feedback Ratio hre X 10− 4 (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 0.1 10 Small − Signal Current Gain hfe − (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 100 400 Output Admittance hoe mmhos (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) 3.0 60 Noise Figure NF dB (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time t (V d − 35 CC = −3.0 Vdc, VBE = 0.5 Vdc, ns I Rise Time C = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (V t CC = −3.0 Vdc, IC = −10 mAdc, s − 225 ns IB1 = IB2 = −1.0 mAdc) Fall Time tf − 75 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
www.onsemi.com 2