Datasheet MMBT3906L, SMMBT3906L (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | PNP Bipolar Transistor |
| 页数 / 页 | 7 / 5 — MMBT3906L, SMMBT3906L. TYPICAL STATIC CHARACTERISTICS. Figure 13. DC … |
| 修订版 | 13 |
| 文件格式/大小 | PDF / 89 Kb |
| 文件语言 | 英语 |
MMBT3906L, SMMBT3906L. TYPICAL STATIC CHARACTERISTICS. Figure 13. DC Current Gain. Figure 14. Collector Saturation Region
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MMBT3906L, SMMBT3906L TYPICAL STATIC CHARACTERISTICS
1000 VCE = 1 V TJ = 150°C GAIN 25°C -55°C 100 , DC CURRENT FEh 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0 TS) TJ = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region www.onsemi.com 5
1000 VCE = 1 V TJ = 150°C GAIN 25°C -55°C 100 , DC CURRENT FEh 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
1.0 TS) TJ = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region www.onsemi.com 5