Datasheet GS66508T (GaN Systems) - 7
| 制造商 | GaN Systems |
| 描述 | 650V Enhancement Mode GaN Transistor |
| 页数 / 页 | 17 / 7 — Electrical Performance Graphs |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
Electrical Performance Graphs
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文件文字版本
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Electrical Performance Graphs
GS66508T Reverse Conduction Characteristics GS66508T ID vs. VGS Characteristic Figure 9: Typical ISD vs. VSD Figure 10: Typical IDS vs. VGS R GS66508T ID-VDS SOA DS(on) Temperature Dependence Figure 11: Normalized RDS(on) as a function of TJ Figure 12: Safe Operating Area @ Tcase = 25 °C Rev 180424 © 2009-2018 GaN Systems Inc. 7 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
Electrical Performance Graphs
GS66508T Reverse Conduction Characteristics GS66508T ID vs. VGS Characteristic Figure 9: Typical ISD vs. VSD Figure 10: Typical IDS vs. VGS R GS66508T ID-VDS SOA DS(on) Temperature Dependence Figure 11: Normalized RDS(on) as a function of TJ Figure 12: Safe Operating Area @ Tcase = 25 °C Rev 180424 © 2009-2018 GaN Systems Inc. 7 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback