Datasheet IRF7832TRPBF (Infineon) - 2
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. … |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions. Avalanche Characteristics. Typ. Max
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IRF7832PbF
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.1 4.0 mΩ VGS = 10V, ID = 20A e ––– 3.7 4.8 VGS = 4.5V, ID = 16A e VGS(th) Gate Threshold Voltage 1.39 ––– 2.32 V VDS = VGS, ID = 250µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– 5.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 77 ––– ––– S VDS = 15V, ID = 16A Qg Total Gate Charge ––– 34 51 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.6 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.9 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 12 ––– ID = 16A Qgodr Gate Charge Overdrive ––– 10.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 14.9 ––– Qoss Output Charge ––– 23 ––– nC VDS = 16V, VGS = 0V Rg Gate Resistance ––– 1.2 2.4 Ω td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 6.7 ––– ID = 16A td(off) Turn-Off Delay Time ––– 21 ––– ns Clamped Inductive Load tf Fall Time ––– 13 ––– Ciss Input Capacitance ––– 4310 ––– VGS = 0V Coss Output Capacitance ––– 990 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
E Single Pulse Avalanche Energy d AS ––– 260 mJ I Avalanche Current AR c ––– 16 A
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current ––– ––– 3.1 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 160 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 16A, VGS = 0V e trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 16A, VDD = 10V Qrr Reverse Recovery Charge ––– 39 59 nC di/dt = 100A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.1 4.0 mΩ VGS = 10V, ID = 20A e ––– 3.7 4.8 VGS = 4.5V, ID = 16A e VGS(th) Gate Threshold Voltage 1.39 ––– 2.32 V VDS = VGS, ID = 250µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– 5.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 77 ––– ––– S VDS = 15V, ID = 16A Qg Total Gate Charge ––– 34 51 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.6 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.9 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 12 ––– ID = 16A Qgodr Gate Charge Overdrive ––– 10.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 14.9 ––– Qoss Output Charge ––– 23 ––– nC VDS = 16V, VGS = 0V Rg Gate Resistance ––– 1.2 2.4 Ω td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 6.7 ––– ID = 16A td(off) Turn-Off Delay Time ––– 21 ––– ns Clamped Inductive Load tf Fall Time ––– 13 ––– Ciss Input Capacitance ––– 4310 ––– VGS = 0V Coss Output Capacitance ––– 990 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
E Single Pulse Avalanche Energy d AS ––– 260 mJ I Avalanche Current AR c ––– 16 A
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current ––– ––– 3.1 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 160 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 16A, VGS = 0V e trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 16A, VDD = 10V Qrr Reverse Recovery Charge ––– 39 59 nC di/dt = 100A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com