Datasheet BC546, BC846 (NXP) - 7
| 制造商 | NXP |
| 描述 | NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages |
| 页数 / 页 | 14 / 7 — NXP Semiconductors. BC846/BC546 series. 65 V, 100 mA NPN general-purpose … |
| 文件格式/大小 | PDF / 382 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BC846/BC546 series. 65 V, 100 mA NPN general-purpose transistors. Fig 5
该数据表的模型线
BC546
文件文字版本
NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors
mgt727 mgt728 600 1200 V h BE FE (mV) 500 (1) 1000 (1) 400 800 (2) (2) 300 600 200 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of Fig 6. Selection B: Base-emitter voltage as a function collector current; typical values of collector current; typical values
mgt729 mgt730 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) (3) (2) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation Fig 8. Selection B: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 7 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
mgt727 mgt728 600 1200 V h BE FE (mV) 500 (1) 1000 (1) 400 800 (2) (2) 300 600 200 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of Fig 6. Selection B: Base-emitter voltage as a function collector current; typical values of collector current; typical values
mgt729 mgt730 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) (3) (2) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation Fig 8. Selection B: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 7 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents