Datasheet BCV61 (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | NPN general-purpose double transistors |
| 页数 / 页 | 14 / 6 — NXP Semiconductors. BCV61. NPN general-purpose double transistors. Fig 1. … |
| 修订版 | 21012010 |
| 文件格式/大小 | PDF / 262 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BCV61. NPN general-purpose double transistors. Fig 1. BCV61A: DC current gain as a function of. Fig 2
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NXP Semiconductors BCV61 NPN general-purpose double transistors
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. BCV61A: DC current gain as a function of Fig 2. BCV61A: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. BCV61A: Collector-emitter saturation voltage Fig 4. BCV61A: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 5 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. BCV61A: DC current gain as a function of Fig 2. BCV61A: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. BCV61A: Collector-emitter saturation voltage Fig 4. BCV61A: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 5 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents