Datasheet BCV61 (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | NPN general-purpose double transistors |
| 页数 / 页 | 14 / 8 — NXP Semiconductors. BCV61. NPN general-purpose double transistors. Fig 9. … |
| 修订版 | 21012010 |
| 文件格式/大小 | PDF / 262 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BCV61. NPN general-purpose double transistors. Fig 9. BCV61C: DC current gain as a function of
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NXP Semiconductors BCV61 NPN general-purpose double transistors
mgt731 mgt732 1200 1200 V h BE FE (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 400 400 (3) (3) 200 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. BCV61C: DC current gain as a function of Fig 10. BCV61C: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt733 mgt734 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. BCV61C: Collector-emitter saturation voltage Fig 12. BCV61C: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 7 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
mgt731 mgt732 1200 1200 V h BE FE (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 400 400 (3) (3) 200 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. BCV61C: DC current gain as a function of Fig 10. BCV61C: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt733 mgt734 104 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. BCV61C: Collector-emitter saturation voltage Fig 12. BCV61C: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 7 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents