Datasheet GAN063-650WSA (Nexperia) - 7
| 制造商 | Nexperia |
| 描述 | 650 V, 50 mΩ Gallium Nitride (GaN) FET |
| 页数 / 页 | 12 / 7 — Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. Fig. 9. … |
| 修订版 | 27112019 |
| 文件格式/大小 | PDF / 289 Kb |
| 文件语言 | 英语 |
Nexperia. GAN063-650WSA. 650 V, 50 mΩ Gal ium Nitride (GaN) FET. Fig. 9. Gate-source threshold voltage as a function of
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Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET
aaa-029174 6 aaa-027810 3 VGS( S t(h) h a (V) V 5 2.5 Max a 4 Ty T p 2 3 1.5 Min 2 1 1 0.5 0 0 -60 -30 0 30 60 90 120 150 180 -60 -30 0 30 60 90 120 150 180 Tj (°C) Tj (°C) ID = 1 mA ; VDS = VGS
Fig. 9. Gate-source threshold voltage as a function of junction temperature Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature
aaa-028058 104 aaa-028063 30 C EO E SS S (pF p ) (µ ( J) µ C 25 iss 103 20 102 15 Coss o 10 10 C 5 rss 1 0 1 10 102 103 0 100 200 300 400 500 600 VDS (V) VDS (V) VGS = 0 V; f = 1 MHz
Fig. 12. Typical COSS Stored Energy Fig. 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 7 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents
aaa-029174 6 aaa-027810 3 VGS( S t(h) h a (V) V 5 2.5 Max a 4 Ty T p 2 3 1.5 Min 2 1 1 0.5 0 0 -60 -30 0 30 60 90 120 150 180 -60 -30 0 30 60 90 120 150 180 Tj (°C) Tj (°C) ID = 1 mA ; VDS = VGS
Fig. 9. Gate-source threshold voltage as a function of junction temperature Fig. 10. Normalized drain-source on-state resistance factor as a function of junction temperature
aaa-028058 104 aaa-028063 30 C EO E SS S (pF p ) (µ ( J) µ C 25 iss 103 20 102 15 Coss o 10 10 C 5 rss 1 0 1 10 102 103 0 100 200 300 400 500 600 VDS (V) VDS (V) VGS = 0 V; f = 1 MHz
Fig. 12. Typical COSS Stored Energy Fig. 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 7 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents