Datasheet GAN063-650WSA (Nexperia) - 8

Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET
aaa-028059 150 IS Tj = 2 5° 5 C ° (A ( ) A 125 50 5 °C ° 75 7 °C ° 100 10 1 0° 0 C ° 12 1 5° 5 C ° 75 15 1 0° 0 C ° 17 1 5° 5 C ° 50 25 0 0 2 4 6 8 10 VSD (V) VGS = 0 V
Fig. 13. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
I, V dlS/dt IS trr t 0.25 IRM Qr IRM A VRRM DUT - VSD + aaa-029277
Fig. 14. Diode reverse recovery test circuit and waveform
GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 8 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents