Datasheet GAN063-650WSA (Nexperia) - 9

Nexperia GAN063-650WSA 650 V, 50 mΩ Gal ium Nitride (GaN) FET 11. Application information
To achieve maximum ef iciency and stability when switching high currents, a switching node RC snubber (Rsn, Csn) is recommended. For IL < 14 A, a switching-node snubber is not required. CSN is taken from the graph. RSN should be selected to achieve a time constant of 1 ns; e.g. if CSN = 100 pF, RSN = 1 ns / 100 pF = 10 Ω. aaa-029603 180 DC bus VBUS Csn (pF) 160 driver Q2 RCDCL RG (place as close as 140 possible to drain pin) 120 VS Vo 100 driver Q1 RG RSN 80 RCSN CSN 60 40 aaa-029331 20
Fig. 16. DC-link snubber circuit
0 0 5 10 15 20 25 30 35 40 IL (A) RG = 30 Ω; τ = RSN × CSN = 1 ns
Fig. 15. Snubber capacitance as function of load current Note:
A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN FET and can lead to instability. For very high current, an RC snubber is recommended for the switching node. This will increase switching loss, so this is only recommended at high power levels where the losses are a very small percentage of the total power. GAN063-650WSA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 9 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Application information 12. Package outline 13. Legal information Contents