Datasheet NV6117 (Navitas Semiconductor) - 7
| 制造商 | Navitas Semiconductor |
| 描述 | 650 V GaNFast Power IC |
| 页数 / 页 | 22 / 7 — NV6117. 6.7. Characteristic Graphs. Final Datasheet. Rev Nov 22, 2019 |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
NV6117. 6.7. Characteristic Graphs. Final Datasheet. Rev Nov 22, 2019
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NV6117 6.7. Characteristic Graphs
(GaN FET, T = 25 ºC unless otherwise specified) C Fig. 3. Pulsed Drain current (I PULSE) vs. Fig. 4. Pulsed Drain current (I PULSE) vs. D D drain-to-source voltage (V ) at T = 25 °C drain-to-source voltage (V ) at T = 125 °C DS DS Fig. 5. Source-to-drain reverse conduction voltage Fig. 6. Drain-to-source leakage current (I ) vs. DSS drain-to-source voltage (V ) DS Fig. 7. V and V vs. junction temperature(T ) Fig. 8. Normalized on-resistance (R ) vs. PWMH PWML J DS(ON) junction temperature (T ) J
Final Datasheet 7 Rev Nov 22, 2019
(GaN FET, T = 25 ºC unless otherwise specified) C Fig. 3. Pulsed Drain current (I PULSE) vs. Fig. 4. Pulsed Drain current (I PULSE) vs. D D drain-to-source voltage (V ) at T = 25 °C drain-to-source voltage (V ) at T = 125 °C DS DS Fig. 5. Source-to-drain reverse conduction voltage Fig. 6. Drain-to-source leakage current (I ) vs. DSS drain-to-source voltage (V ) DS Fig. 7. V and V vs. junction temperature(T ) Fig. 8. Normalized on-resistance (R ) vs. PWMH PWML J DS(ON) junction temperature (T ) J
Final Datasheet 7 Rev Nov 22, 2019