Datasheet FDS6890A (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 页数 / 页 | 5 / 1 — FDS6890A. FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 199 Kb |
| 文件语言 | 英语 |
FDS6890A. FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET. General Description. Features. Applications. pin 1. SO-8
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文件文字版本
FDS6890A FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features
These N-Channel 2.5V specified MOSFETs are • 7.5 A, 20 V. R = 0.018 Ω @ V = 4.5 V DS(ON) GS produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored R = 0.022 Ω @ V = 2.5 V. DS(ON) GS to minimize the on-state resistance and yet maintain • Low gate charge (23nC typical). low gate charge for superior switching performance. • Fast switching speed.
Applications
• High performance trench technology for extremely low R . DS(ON) • DC/DC converter • Motor drives • High power and current handling capability.
D2 D2
5 4
D1 D1
6 3 7 2
G2 S2 G1
8 1
pin 1 SO-8 S1 Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) 7.5 A - Pulsed 20 PD Power Dissipation for Dual Operation 2.0 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W 90
Package Marking and Ordering Information Device Marking Device Reel Size Tape W idth Quantity
FDS6890A FDS6890A 13 12mm 2500 units 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDS6890A/D
These N-Channel 2.5V specified MOSFETs are • 7.5 A, 20 V. R = 0.018 Ω @ V = 4.5 V DS(ON) GS produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored R = 0.022 Ω @ V = 2.5 V. DS(ON) GS to minimize the on-state resistance and yet maintain • Low gate charge (23nC typical). low gate charge for superior switching performance. • Fast switching speed.
Applications
• High performance trench technology for extremely low R . DS(ON) • DC/DC converter • Motor drives • High power and current handling capability.
D2 D2
5 4
D1 D1
6 3 7 2
G2 S2 G1
8 1
pin 1 SO-8 S1 Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) 7.5 A - Pulsed 20 PD Power Dissipation for Dual Operation 2.0 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W 90
Package Marking and Ordering Information Device Marking Device Reel Size Tape W idth Quantity
FDS6890A FDS6890A 13 12mm 2500 units 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDS6890A/D