Datasheet FDS6890A (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 页数 / 页 | 5 / 3 — FDS6890A. Typical Characteristics. (A). TANCE. IS S. URRE. RMALIZ. URCE. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 199 Kb |
| 文件语言 | 英语 |
FDS6890A. Typical Characteristics. (A). TANCE. IS S. URRE. RMALIZ. URCE. , NO. , DR. I D. DRAIN-. VDS, DRAIN-SOURCE VOLTAGE (V)
该数据表的模型线
文件文字版本
FDS6890A Typical Characteristics
(continued) 30 1.8 VGS=4.5V 2.5V
(A)
2.0V VGS =1.8V 24
NT
1.6
D TANCE E IS S
2.0V
URRE
18
RE C
1.4 1.8V
N- RMALIZ O URCE
2.5V
O
12
, NO S
1.2
N) URCE N- (O O
3.0V
AI DS S R
3.5V 6 1.5V
, DR
1 4.5
I D DRAIN-
0 0.8 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 0.05 ID = 7.5A
)
ID =3.8A 1.6
NCE
VGS = 4.5V
A HM
0.04
D T (O E IS
1.4
E IZ S E C N AL R A
0.03 1.2
N- T RM O IS S
1 TA = 125oC
, NO -RE
0.02
N) URCE N (O O
T
DS
0.8
, O
A = 25oC
R -S N) IN (O
0.01
DS
0.6
R DRA
0.4 0 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
V T GS, GATE TO SOURCE VOLTAGE (V) J, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with withTemperature. Gate-to-Source Voltage.
30 100 o T o A = -55 C 25 C
)
VGS=0 VDS = 5V
A
o
(
125 C 10
T )
24
A EN ( T R N R
1
U
TJ=125oC 18
RE C IN
25oC
A
0.1
CUR R
-55oC
N D
12
E RAI S
0.01
R , D I D
6
EVE
0.001
, R I S
0 0.0001 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2
V V GS, GATE TO SOURCE VOLTAGE (V) SD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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(continued) 30 1.8 VGS=4.5V 2.5V
(A)
2.0V VGS =1.8V 24
NT
1.6
D TANCE E IS S
2.0V
URRE
18
RE C
1.4 1.8V
N- RMALIZ O URCE
2.5V
O
12
, NO S
1.2
N) URCE N- (O O
3.0V
AI DS S R
3.5V 6 1.5V
, DR
1 4.5
I D DRAIN-
0 0.8 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 0.05 ID = 7.5A
)
ID =3.8A 1.6
NCE
VGS = 4.5V
A HM
0.04
D T (O E IS
1.4
E IZ S E C N AL R A
0.03 1.2
N- T RM O IS S
1 TA = 125oC
, NO -RE
0.02
N) URCE N (O O
T
DS
0.8
, O
A = 25oC
R -S N) IN (O
0.01
DS
0.6
R DRA
0.4 0 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
V T GS, GATE TO SOURCE VOLTAGE (V) J, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with withTemperature. Gate-to-Source Voltage.
30 100 o T o A = -55 C 25 C
)
VGS=0 VDS = 5V
A
o
(
125 C 10
T )
24
A EN ( T R N R
1
U
TJ=125oC 18
RE C IN
25oC
A
0.1
CUR R
-55oC
N D
12
E RAI S
0.01
R , D I D
6
EVE
0.001
, R I S
0 0.0001 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2
V V GS, GATE TO SOURCE VOLTAGE (V) SD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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