Datasheet BPX 43 (OSRAM) - 3

link to page 13 BPX 43 Characteristics T = 25 °C A Parameter Symbol Values Wavelength of max sensitivity λ typ. 880 nm S max Spectral range of sensitivity λ typ. 450 ... 1100 10% nm Chip dimensions L x W typ. 1.02 x 1.02 mm x mm Radiant sensitive area A typ. 0.675 mm² Half angle φ typ. 15 ° Photocurrent I typ. 7750 µA PCE V = 5 V; Std. Light A; E = 1000 lx CE v Photocurrent of collector-base photodiode I typ. 11 µA PCB E = 0.5 mW/cm²; λ = 950 nm; V = 5 V e CB Photocurrent of collector-base photodiode I typ. 35 µA PCB E = 1000 lx; Std. Light A ; V = 5 V v CB Dark current I typ. 20 nA CE0 V = 20 V max. 100 nA CE Rise time t typ. 12 µs r I = 1 mA; V = 5 V; R  = 1 kΩ C CC L Fall time t typ. 12 µs f I = 1 mA; V = 5 V; R  = 1 kΩ C CC L Collector-emitter saturation voltage 1) V typ. 230 mV CEsat I = I X 0.3; E = 0.5 mW/cm² C PCE,min e Capacitance C typ. 23 pF CE V = 0 V; f = 1 MHz; E = 0 CE Capacitance C typ. 39 pF CB V = 0 V; f = 1 MHz; E = 0 CB Capacitance C typ. 47 pF EB V = 0 V; f = 1 MHz; E = 0 EB Thermal resistance junction ambient real R max. 450 K / W thJA 3 Version 1.4 | 2018-09-10