Datasheet ZXM61N02F (Diodes) - 6
| 制造商 | Diodes |
| 描述 | N-Channel Enhancement Mode MOSFET |
| 页数 / 页 | 7 / 6 — ZXM61N02F. TYPICAL CHARACTERISTICS. Capacitance v Drain-Source Voltage. … |
| 文件格式/大小 | PDF / 217 Kb |
| 文件语言 | 英语 |
ZXM61N02F. TYPICAL CHARACTERISTICS. Capacitance v Drain-Source Voltage. Gate-Source Voltage v Gate Charge
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文件文字版本
ZXM61N02F TYPICAL CHARACTERISTICS
400 5 ID=0.93A (V) VGS=0V ) e Ciss g VDS=16V f=1MHz 4 Coss (pF 300 Crss e olta V nc e 3 c ita c 200 pa Sour 2 te 100 a C - Ca 1 - G GS 0 V 0 0.1 1 10 100 0 1 2 3 VDS - Drain-Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit
ISSUE 1 - JUNE 2004
6
400 5 ID=0.93A (V) VGS=0V ) e Ciss g VDS=16V f=1MHz 4 Coss (pF 300 Crss e olta V nc e 3 c ita c 200 pa Sour 2 te 100 a C - Ca 1 - G GS 0 V 0 0.1 1 10 100 0 1 2 3 VDS - Drain-Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit
ISSUE 1 - JUNE 2004
6