Datasheet SQJ264EP (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs |
| 页数 / 页 | 12 / 3 — SQJ264EP. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| 文件格式/大小 | PDF / 349 Kb |
| 文件语言 | 英语 |
SQJ264EP. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Dynamic b
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SQJ264EP
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b
VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 11 18 Turn-on delay time c td(on) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 12 25 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 2 5 Rise time c tr VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 3 5 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 16 30 Turn-off delay time c td(off) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 20 40 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 8 15 Fall time c tf VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 11 18
Source-Drain Diode Ratings and Characteristics b
N-Ch 1 - - 65 Pulsed current a ISM A N-Ch 2 - - 90 IF = 6 A, VGS = 0 V N-Ch 1 - 0.82 1.2 Forward voltage VSD V IF = 10 A, VGS = 0 V N-Ch 2 - 0.80 1.2 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 22 45 Body diode reverse recovery time trr ns IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 41 85 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 15 30 Body diode reverse recovery charge Qrr nC IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 36 75 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 12 - Reverse recovery fall time ta IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 19 - ns IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 10 - Reverse recovery rise time tb IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 22 - Body diode peak reverse recovery IF = 4 A, di/dt = 100 A/μs N-Ch 1 - -1.3 - I A current RM(REC) IF = 5 A, di/dt = 100 A/μs N-Ch 2 - -1.6 -
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1108-Rev. A, 30-Dec-2019
3
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b
VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 11 18 Turn-on delay time c td(on) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 12 25 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 2 5 Rise time c tr VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 3 5 ns VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 16 30 Turn-off delay time c td(off) VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 20 40 VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω N-Ch 1 - 8 15 Fall time c tf VDD = 30 V, RL = 10 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω N-Ch 2 - 11 18
Source-Drain Diode Ratings and Characteristics b
N-Ch 1 - - 65 Pulsed current a ISM A N-Ch 2 - - 90 IF = 6 A, VGS = 0 V N-Ch 1 - 0.82 1.2 Forward voltage VSD V IF = 10 A, VGS = 0 V N-Ch 2 - 0.80 1.2 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 22 45 Body diode reverse recovery time trr ns IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 41 85 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 15 30 Body diode reverse recovery charge Qrr nC IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 36 75 IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 12 - Reverse recovery fall time ta IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 19 - ns IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 10 - Reverse recovery rise time tb IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 22 - Body diode peak reverse recovery IF = 4 A, di/dt = 100 A/μs N-Ch 1 - -1.3 - I A current RM(REC) IF = 5 A, di/dt = 100 A/μs N-Ch 2 - -1.6 -
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1108-Rev. A, 30-Dec-2019
3
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000