Datasheet IRG4PH50UDPbF (Infineon) - 8

IRG4PH50UDPbF
Same type device as D .U.T.
90%
430µF 80% of Vce D .U .T.
10% V ge C V 90% td(off) 10% 5% IC t t r f
Fig. 18a
- Test Circuit for Measurement of t d(on) t=5µs ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eon Eoff Ets = ( o E n + Eof f )
Fig. 18b
- Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr G A T E V O LT A G E D .U .T . trr Ic Q rr = ∫ id dt Ic dt tx 10% +V g + V g tx 10% Irr 10% V cc V cc D U T V O LT A G E V ce A N D C U R R E N T V pk Irr 10% Ic V cc Ipk 90% Ic Ic D IO D E R E C O V E R Y W A V E FO R M S 5% V ce td(on) tr E ∫ t2 on = V ce ie dt Vce Ic dt t4 t1 E rec =∫ Vd id dt Vd Ic dt t3 t1 t2 D IO D E R E V E R S E R E C O V E R Y E N E R G Y t3 t4
Fig. 18c
- Test Waveforms for Circuit of Fig. 18a,
Fig. 18d
- Test Waveforms for Circuit of Fig. 18a, Defining E Defining E on, td(on), tr rec, trr, Qrr, Irr 8 www.irf.com