Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 6
制造商 | ON Semiconductor |
描述 | Darlington Complementary Silicon Power Transistors |
页数 / 页 | 8 / 6 — BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure … |
修订版 | 17 |
文件格式/大小 | PDF / 239 Kb |
文件语言 | 英语 |
BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure 12. Temperature Coefficients
该数据表的模型线
文件文字版本
BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP)
+5.0 +5.0 C) ° C) ° +4.0 +4.0 *IC/IB v 250 *IC/IB v 250 (mV/ +3.0 +3.0 + 25°C to 150°C +2.0 25°C to 150°C +2.0 +1.0 +1.0 -55°C to 25°C COEFFICIENT 0 0 -1.0 *q -1.0 TURE VC for VCE(sat) *q TURE COEFFICIENTS (mV/ VC for VCE(sat) -2.0 -2.0 25°C to 150°C q -55°C to + 25°C VB for VBE -3.0 q -3.0 + 25 -55 °C to 150°C °C to +25°C VB for VBE , TEMPERA V -55 -4.0 °C to 25°C θ , TEMPERA V -4.0 θ -5.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
105 105 REVERSE FORWARD REVERSE FORWARD 104 104 μ μ (A) V (A) CE = 30 V VCE = 30 V 103 103 102 102 OR CURRENT OR CURRENT T T J = 150°C J = 150°C 101 101 , COLLECT 100°C , COLLECT I C 100 I C 100 100°C 25°C 25°C 10-1 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
NPN COLLECTOR PNP COLLECTOR BDW42 BDW46 BDW47 BASE BASE [ 8.0 k [ 60 [ 8.0 k [ 60 EMITTER EMITTER
Figure 14. Darlington Schematic www.onsemi.com 6