Datasheet HMC1082CHIP (Analog Devices) - 9
| 制造商 | Analog Devices |
| 描述 | 5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC, Medium Power Amplifier |
| 页数 / 页 | 15 / 9 — Data Sheet. HMC1082CHIP. dBm) B (. (dBm). P1d. P SAT. 4.0V. 4.5V. 5.0V. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 378 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC1082CHIP. dBm) B (. (dBm). P1d. P SAT. 4.0V. 4.5V. 5.0V. 5.5. 8.0. 10.5. 13.0. 15.5. 18.0. FREQUENCY (GHz). 180mA. 200mA. 220mA. 250mA. 326. 1.4
该数据表的模型线
文件文字版本
Data Sheet HMC1082CHIP 30 30 28 28 26 26 24 24 dBm) B ( (dBm) 22 22 P1d P SAT 20 20 18 4.0V 18 4.0V 4.5V 4.5V 5.0V 5.0V 16 16 5.5 8.0 10.5 13.0 15.5 18.0
020
5.5 8.0 10.5 13.0 15.5 18.0
023
FREQUENCY (GHz)
20651-
FREQUENCY (GHz)
20651- Figure 20. P1dB vs. Frequency for Various VDD, IDQ = 220 mA Figure 23. PSAT vs. Frequency for Various VDD, IDQ = 220 mA
30 30 28 28 26 26 24 24 dBm) B ( (dBm) 22 22 P1d P SAT 20 20 180mA 180mA 18 200mA 18 200mA 220mA 220mA 250mA 250mA 16 16 5.5 8.0 10.5 13.0 15.5 18.0
021
5.5 8.0 10.5 13.0 15.5 18.0
024
FREQUENCY (GHz)
20651-
FREQUENCY (GHz)
20651- Figure 21. P1dB vs. Frequency for Various IDQ, VDD = 5 V Figure 24. PSAT vs. Frequency for Various IDQ, VDD = 5 V
30 326 1.4 25 309 1.3 (%) ) AE 1.2 , P 20 292 N (W dB) TIO 1.1 N ( PA AI 15 275 (mA) , G I DD ISSI D 1.0 10 258 ER (dBm) W 0.9 UT PO 7GHz P O P 9GHz 5 OUT GAIN 241 11GHz PAE 0.8 13GHz I 15GHz DD 17GHz 0 224 0.7 –8 –7 –6 –5 –4 –3 –2 –1 0 1 2 3 4 5 6 7
022
–8 –6 –4 –2 0 2 4 6 8
025
INPUT POWER (dBm)
20651-
INPUT POWER (dBm)
20651- Figure 22. POUT, Gain, PAE, and Drain Current (IDD) vs. Input Power, Figure 25. Power Dissipation vs. Input Power at T = 85°C, VDD = 5 V, Frequency = 11 GHz IDD = 220 mA Rev. B | Page 9 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
020
5.5 8.0 10.5 13.0 15.5 18.0
023
FREQUENCY (GHz)
20651-
FREQUENCY (GHz)
20651- Figure 20. P1dB vs. Frequency for Various VDD, IDQ = 220 mA Figure 23. PSAT vs. Frequency for Various VDD, IDQ = 220 mA
30 30 28 28 26 26 24 24 dBm) B ( (dBm) 22 22 P1d P SAT 20 20 180mA 180mA 18 200mA 18 200mA 220mA 220mA 250mA 250mA 16 16 5.5 8.0 10.5 13.0 15.5 18.0
021
5.5 8.0 10.5 13.0 15.5 18.0
024
FREQUENCY (GHz)
20651-
FREQUENCY (GHz)
20651- Figure 21. P1dB vs. Frequency for Various IDQ, VDD = 5 V Figure 24. PSAT vs. Frequency for Various IDQ, VDD = 5 V
30 326 1.4 25 309 1.3 (%) ) AE 1.2 , P 20 292 N (W dB) TIO 1.1 N ( PA AI 15 275 (mA) , G I DD ISSI D 1.0 10 258 ER (dBm) W 0.9 UT PO 7GHz P O P 9GHz 5 OUT GAIN 241 11GHz PAE 0.8 13GHz I 15GHz DD 17GHz 0 224 0.7 –8 –7 –6 –5 –4 –3 –2 –1 0 1 2 3 4 5 6 7
022
–8 –6 –4 –2 0 2 4 6 8
025
INPUT POWER (dBm)
20651-
INPUT POWER (dBm)
20651- Figure 22. POUT, Gain, PAE, and Drain Current (IDD) vs. Input Power, Figure 25. Power Dissipation vs. Input Power at T = 85°C, VDD = 5 V, Frequency = 11 GHz IDD = 220 mA Rev. B | Page 9 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE