Datasheet HMC-AUH318 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 -76 GHz |
| 页数 / 页 | 6 / 1 — HMC-AUH318. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 76 GHz. Typical … |
| 文件格式/大小 | PDF / 298 Kb |
| 文件语言 | 英语 |
HMC-AUH318. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 76 GHz. Typical Applications. Features. Functional Diagram
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HMC-AUH318
v07.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications Features
This HMC-AUH318 is ideal for: Gain: 24 dB • Short Haul / High Capacity Links P1dB: +17.5 dBm 3 • Test & Measurement Equipment Supply Voltage: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output Die Size: 2.65 x 1.60 x 0.05 mm IP H R - C
Functional Diagram General Description
E The HMC-AUH318 is a high dynamic range, three W stage GaAs HEMT MMIC Medium Power Amplifier O which operates between 71 and 76 GHz. The HMC- AUH318 provides 24 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V R & P supply voltage. All bond pads and the die backside A are Ti/Au metal ized. The HMC-AUH318 GaAs E HEMT MMIC Medium Power Amplifier is compatible IN with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit S - L applications. All data shown herein is measured with R the chip in a 50 Ohm environment and contacted with RF probes. IE LIF P M
Electrical Specifications[1], T = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
A
A Parameter Min. Typ. Max. Units Frequency Range 71 - 76 GHz Gain 21 24 dB Input Return Loss 7 dB Output Return Loss 4 dB Output power for 1 dB Compression (P1dB) 17.5 dBm Saturated Output Power (Psat) 20 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA. Products and product information are subject to change without notice. Inf F or o m r p ation rfic ur e nis, d he e d lbiy ve An ry a alog n Ded t vice o p s is la belciee o ved rd to e b r e sa: H ccur iattte itae M nd reliic a r bl o e. w H a o v we e C ver, noo For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
3 - 1
Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No Ph rd on e e r O : 7 n 81- - 3 li 2 n 9-e a 470 t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli o cat ri a o p n S p ups@ por h t it : Ptit hoen.c e om : 1-800-ANALOG-D
v07.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications Features
This HMC-AUH318 is ideal for: Gain: 24 dB • Short Haul / High Capacity Links P1dB: +17.5 dBm 3 • Test & Measurement Equipment Supply Voltage: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output Die Size: 2.65 x 1.60 x 0.05 mm IP H R - C
Functional Diagram General Description
E The HMC-AUH318 is a high dynamic range, three W stage GaAs HEMT MMIC Medium Power Amplifier O which operates between 71 and 76 GHz. The HMC- AUH318 provides 24 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V R & P supply voltage. All bond pads and the die backside A are Ti/Au metal ized. The HMC-AUH318 GaAs E HEMT MMIC Medium Power Amplifier is compatible IN with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit S - L applications. All data shown herein is measured with R the chip in a 50 Ohm environment and contacted with RF probes. IE LIF P M
Electrical Specifications[1], T = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
A
A Parameter Min. Typ. Max. Units Frequency Range 71 - 76 GHz Gain 21 24 dB Input Return Loss 7 dB Output Return Loss 4 dB Output power for 1 dB Compression (P1dB) 17.5 dBm Saturated Output Power (Psat) 20 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA. Products and product information are subject to change without notice. Inf F or o m r p ation rfic ur e nis, d he e d lbiy ve An ry a alog n Ded t vice o p s is la belciee o ved rd to e b r e sa: H ccur iattte itae M nd reliic a r bl o e. w H a o v we e C ver, noo For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
3 - 1
Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No Ph rd on e e r O : 7 n 81- - 3 li 2 n 9-e a 470 t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli o cat ri a o p n S p ups@ por h t it : Ptit hoen.c e om : 1-800-ANALOG-D