Datasheet STGAP2SICS (STMicroelectronics) - 4

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STGAP2SICS Electrical data 3 Electrical data 3.1 Absolute maximum ratings Table 2. Absolute maximum ratings Test Symbol Parameter Min. Max. Unit condition
VDD Logic supply voltage vs. GND - -0.3 6.5 V VLOGIC Logic pins voltage vs. GND - -0.3 6.5 V Positive supply voltage VH - -0.3 28 V (VH vs. GNDISO) VOUT Voltage on gate driver outputs (GON, GOFF, CLAMP VS. GNDISO) - -0.3 VH+0.3 V TJ Junction temperature - -40 150 °C TS Storage temperature - -50 150 °C ESD HBM (human body model) - 2 kV
3.2 Thermal data Table 3. Thermal data Symbol Parameter Package Value Unit
Rth(JA) Thermal resistance junction to ambient SO-8W 118 °C/W
3.3 Recommended operating conditions Table 4. Recommended operating conditions Symbol Parameter Test conditions Min. Max. Unit
VDD Logic supply voltage vs. GND - 3 5.5 V VLOGIC Logic pins voltage vs. GND - 0 5.5 V Positive supply voltage VH - Max(VHON) 26 V (VH vs. GNDISO) FSW Maximum switching frequency(1) - - 1 MHz TOUT Output Pulse width - 100 - ns TJ Operating Junction Temperature - -40 125 °C 1. Actual limit depends on power dissipation and TJ.
DS13402
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Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Pin description and connection diagram 3 Electrical data 3.1 Absolute maximum ratings 3.2 Thermal data 3.3 Recommended operating conditions 4 Electrical characteristics 5 Isolation 6 Functional description 6.1 Gate driving power supply and UVLO 6.2 Power-up, power-down and “safe state” 6.3 Control inputs 6.4 Miller Clamp function 6.5 Watchdog 6.6 Thermal shutdown protection 6.7 Standby function 7 Typical application diagram 8 Layout 8.1 Layout guidelines and considerations 8.2 Layout example 9 Testing and characterization information 10 Package information 10.1 SO-8W package information 10.2 SO-8W suggested land pattern 11 Ordering information Revision history Contents List of tables List of figures