TIPL762, TIPL762ANPN SILICON POWER TRANSISTORSPARAMETER MEASUREMENT INFORMATION33 Ω +5VD45H11BY205-400BY205-400RB33 Ω (on)1 pF180 µ HvccV Gen2N22221 k Ω BY205-40068 Ω 0.02 µ FTUT1 k Ω Vclamp = 400 V+5V5X BY205-400270 Ω BY205-4001 k Ω E 2N2904 Adjust pw to obtain IC D44H1147 Ω For IC < 6 A VCC = 50 V VBE(off) For IC ≥ 6 A VCC = 100 V 100 Ω Figure 1. Inductive-Load Switching Test CircuitIB(on)A (90%) A - B = t IBase Current sv B OBSOLET B - C = trv D - E = tfi E - F = tti C90% B - E = txo B10%VCollector VoltageCED (90%)E (10%)ICollector CurrentC(on)F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 3 Specifications are subject to change without notice.