Datasheet MASTERGAN4 (STMicroelectronics) - 10
| 制造商 | STMicroelectronics |
| 描述 | High power density 600V half-bridge driver with two enhancement mode GaN HEMT |
| 页数 / 页 | 27 / 10 — MASTERGAN4. Device characterization values. Figure 3. Switching time … |
| 文件格式/大小 | PDF / 480 Kb |
| 文件语言 | 英语 |
MASTERGAN4. Device characterization values. Figure 3. Switching time definition. Figure 4. Typ ID vs VDS at TJ=25°C
该数据表的模型线
文件文字版本
MASTERGAN4 Device characterization values Figure 3. Switching time definition
VDS ID ID VDS 10%I 10%V D DS 10%ID 10%VDS t(ON) t V C(OFF) IN V t IN (OFF) tC(ON) (a) turn-on (b) turn-off
Figure 4. Typ ID vs VDS at TJ=25°C Figure 5. Typ ID vs VDS at TJ=125°C
20 10 TJ=25°C TJ=125°C 18 9 VGS=6V VGS=6V 16 8 VGS=5V 14 VGS=5V 7 12 V 6 GS=4V VGS=4V (A) (A) I D 10 I D 5 8 4 6 3 4 2 2 1 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS (V) VDS (V)
DS13686
-
Rev 1 page 10/27
Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history
VDS ID ID VDS 10%I 10%V D DS 10%ID 10%VDS t(ON) t V C(OFF) IN V t IN (OFF) tC(ON) (a) turn-on (b) turn-off
Figure 4. Typ ID vs VDS at TJ=25°C Figure 5. Typ ID vs VDS at TJ=125°C
20 10 TJ=25°C TJ=125°C 18 9 VGS=6V VGS=6V 16 8 VGS=5V 14 VGS=5V 7 12 V 6 GS=4V VGS=4V (A) (A) I D 10 I D 5 8 4 6 3 4 2 2 1 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS (V) VDS (V)
DS13686
-
Rev 1 page 10/27
Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history