Datasheet STL200N45LF7 (STMicroelectronics) - 5
| 制造商 | STMicroelectronics |
| 描述 | N-channel 45 V, 1.4 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package |
| 页数 / 页 | 14 / 5 — STL200N45LF7. Electrical characteristics. Table 7: Source-drain diode. … |
| 文件格式/大小 | PDF / 910 Kb |
| 文件语言 | 英语 |
STL200N45LF7. Electrical characteristics. Table 7: Source-drain diode. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit
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STL200N45LF7 Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
V (1) SD Forward on voltage ISD = 36 A, VGS = 0 V - 1.1 V trr Reverse recovery time - 48 ns ID = 36 A, di/dt = 100 A/µs, Reverse recovery Qrr V - 55 nC DD = 36 V, (see Figure 15: "Test charge circuit for inductive load switching Reverse recovery and diode recovery times") IRRM - 2.3 A current
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027980 Rev 4 5/14
STL200N45LF7 Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
V (1) SD Forward on voltage ISD = 36 A, VGS = 0 V - 1.1 V trr Reverse recovery time - 48 ns ID = 36 A, di/dt = 100 A/µs, Reverse recovery Qrr V - 55 nC DD = 36 V, (see Figure 15: "Test charge circuit for inductive load switching Reverse recovery and diode recovery times") IRRM - 2.3 A current
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027980 Rev 4 5/14