Datasheet MPS3646 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Switching Transistor NPN Silicon |
| 页数 / 页 | 8 / 2 — NPN Silicon. ON Semiconductor Preferred Device. This device is available … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 183 Kb |
| 文件语言 | 英语 |
NPN Silicon. ON Semiconductor Preferred Device. This device is available in Pb−free package(s). Specifications herein
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ON Semiconductort Switching Transistor MPS3646
NPN Silicon ON Semiconductor Preferred Device
w
This device is available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 15 Vdc Collector−Emitter Voltage VCES 40 Vdc 1 2 Collector−Base Voltage V 3 CBO 40 Vdc Emitter−Base Voltage VEBO 5.0 Vdc
CASE 29−11, STYLE 1
Collector Current — Continuous IC 300 mAdc
TO−92 (TO−226AA)
— 10 ms Pulse 500 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C COLLECTOR Total Device Dissipation @ TC = 25°C PD 1.5 Watts 3 Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C 2 Temperature Range BASE
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
1 EMITTER Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 40 — Vdc Collector−Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current ICES mAdc (VCE = 20 Vdc, VBE = 0) — 0.5 (VCE = 20 Vdc, VBE = 0, TA = 65°C) — 3.0
ON CHARACTERISTICS(1)
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) hFE 30 120 — (IC = 100 mAdc, VCE = 0.5 Vdc) 25 — (IC = 300 mA, VCE = 1.0 Vdc) 15 — Collector−Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VCE(sat) — 0.2 Vdc (IC = 100 mAdc, IB = 10 mAdc) — 0.28 (IC = 300 mAdc, IB = 30 mAdc) — 0.5 (IC = 30 mA, IB = 3.0 mA, TA = 65°C) — 0.3 Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) 0.73 0.95 Vdc (IC = 100 mAdc, IB = 10 mAdc) — 1.2 (IC = 300 mAdc, IB = 30 mA) — 1.7 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 3 MPS3646/D
NPN Silicon ON Semiconductor Preferred Device
w
This device is available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 15 Vdc Collector−Emitter Voltage VCES 40 Vdc 1 2 Collector−Base Voltage V 3 CBO 40 Vdc Emitter−Base Voltage VEBO 5.0 Vdc
CASE 29−11, STYLE 1
Collector Current — Continuous IC 300 mAdc
TO−92 (TO−226AA)
— 10 ms Pulse 500 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C COLLECTOR Total Device Dissipation @ TC = 25°C PD 1.5 Watts 3 Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C 2 Temperature Range BASE
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
1 EMITTER Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 40 — Vdc Collector−Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current ICES mAdc (VCE = 20 Vdc, VBE = 0) — 0.5 (VCE = 20 Vdc, VBE = 0, TA = 65°C) — 3.0
ON CHARACTERISTICS(1)
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) hFE 30 120 — (IC = 100 mAdc, VCE = 0.5 Vdc) 25 — (IC = 300 mA, VCE = 1.0 Vdc) 15 — Collector−Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VCE(sat) — 0.2 Vdc (IC = 100 mAdc, IB = 10 mAdc) — 0.28 (IC = 300 mAdc, IB = 30 mAdc) — 0.5 (IC = 30 mA, IB = 3.0 mA, TA = 65°C) — 0.3 Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) 0.73 0.95 Vdc (IC = 100 mAdc, IB = 10 mAdc) — 1.2 (IC = 300 mAdc, IB = 30 mA) — 1.7 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 3 MPS3646/D