Datasheet MPS3646 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Switching Transistor NPN Silicon |
| 页数 / 页 | 8 / 3 — MPS3646. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 183 Kb |
| 文件语言 | 英语 |
MPS3646. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. SMALL−SIGNAL CHARACTERISTICS. SWITCHING CHARACTERISTICS
该数据表的模型线
文件文字版本
MPS3646 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product fT 350 — MHz (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance Cobo — 5.0 pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo — 9.0 pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time ton — 18 ns (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) Delay Time t (Figure 1) d — 10 ns Rise Time tr — 15 ns Turn−Off Time (V t CC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) off — 28 ns (Figure 1) Fall Time tf — 15 ns Storage Time ts — 18 ns (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) −3.0 V +10 V 33 1.0 k +7.6 V 0.1 120 To Sampling Scope 0 Vin tr < 1.0 ns Zin = 100 kΩ tr, tf < 1.0 ns 50 Pulse Width ≥ 240 ns Zin = 50 Ω
Figure 1. Switching Time Test Circuit
+10 V 10% Pulse +6.0 V Waveform at Point “A” 91 0 +11 V 0.1 −4 V 10% 500 890 Vout 500 To Sampling Scope ts 0 tr ≤ 1.0 ns V “A” in Zin = 100 kΩ −10 V 56 tr < 1.0 ns Pulse Width = 300 ns Duty Cycle = 2.0% Zin = 50 Ω
Figure 2. Charge Storage Time Test Circuit http://onsemi.com 2
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product fT 350 — MHz (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance Cobo — 5.0 pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo — 9.0 pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time ton — 18 ns (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) Delay Time t (Figure 1) d — 10 ns Rise Time tr — 15 ns Turn−Off Time (V t CC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) off — 28 ns (Figure 1) Fall Time tf — 15 ns Storage Time ts — 18 ns (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) −3.0 V +10 V 33 1.0 k +7.6 V 0.1 120 To Sampling Scope 0 Vin tr < 1.0 ns Zin = 100 kΩ tr, tf < 1.0 ns 50 Pulse Width ≥ 240 ns Zin = 50 Ω
Figure 1. Switching Time Test Circuit
+10 V 10% Pulse +6.0 V Waveform at Point “A” 91 0 +11 V 0.1 −4 V 10% 500 890 Vout 500 To Sampling Scope ts 0 tr ≤ 1.0 ns V “A” in Zin = 100 kΩ −10 V 56 tr < 1.0 ns Pulse Width = 300 ns Duty Cycle = 2.0% Zin = 50 Ω
Figure 2. Charge Storage Time Test Circuit http://onsemi.com 2