Datasheet NDS9948 (Fairchild)
| 制造商 | Fairchild |
| 描述 | Dual 60V P-Channel PowerTrench MOSFET |
| 页数 / 页 | 6 / 1 — NDS9948. January 2010. NDS9948 Dual 60V P-Channel PowerTrench. MOSFET. … |
| 文件格式/大小 | PDF / 382 Kb |
| 文件语言 | 英语 |
NDS9948. January 2010. NDS9948 Dual 60V P-Channel PowerTrench. MOSFET. General Description. Features. Applications. DD1. DD2. SO-8. S1 G
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文件文字版本
NDS9948 January 2010 NDS9948 Dual 60V P-Channel PowerTrench
MOSFET General Description Features
This P-Channel MOSFET is a rugged gate version of • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management RDS(ON) = 500 mΩ @ VGS = –4.5 V applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • Low gate charge (9nC typical)
Applications
• Fast switching speed • Power management • High performance trench technology for extremely • Load switch low RDS(ON) • Battery protection • High power and current handling capability
DD1 5 4 DD1 DD2 6 Q1 3 D D2 7 2 G1 SO-8 Q2 S1 G 8 1 G2 S S2 S
Pin 1
SO-8 S Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –2.3 A – Pulsed –10 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W (Note 1c) 135 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units 2010 Fairchild Semiconductor Corporation NDS9948 Rev B1(W)
MOSFET General Description Features
This P-Channel MOSFET is a rugged gate version of • –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management RDS(ON) = 500 mΩ @ VGS = –4.5 V applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • Low gate charge (9nC typical)
Applications
• Fast switching speed • Power management • High performance trench technology for extremely • Load switch low RDS(ON) • Battery protection • High power and current handling capability
DD1 5 4 DD1 DD2 6 Q1 3 D D2 7 2 G1 SO-8 Q2 S1 G 8 1 G2 S S2 S
Pin 1
SO-8 S Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –2.3 A – Pulsed –10 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W (Note 1c) 135 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units 2010 Fairchild Semiconductor Corporation NDS9948 Rev B1(W)